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GSS4816S - DUAL N-CHANNEL MOSFET

Datasheet Summary

Description

CH1 BVDSS 30V N-CH RDS(ON) 22m N-CH ID 6.7A CH2 BVDSS 30V N-CH RDS(ON) 13m N-CH ID 11.5A

Features

  • Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings CH-1 CH-2 Unit V V A A A W W/ 30 ±20 6.7 5.3 30 1.4 0.01 30 ±20.

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Datasheet Details

Part number GSS4816S
Manufacturer GTM
File Size 565.49 KB
Description DUAL N-CHANNEL MOSFET
Datasheet download datasheet GSS4816S Datasheet
Additional preview pages of the GSS4816S datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/28 REVISED DATE : GSS4816S DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE The GSS4816S provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *DC-DC Converter Suitable *Fast Switching Performance Description CH1 BVDSS 30V N-CH RDS(ON) 22m N-CH ID 6.7A CH2 BVDSS 30V N-CH RDS(ON) 13m N-CH ID 11.5A Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max.
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