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GT6301K Datasheet Preview

GT6301K Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Pb Free Plating Product
ISSUED DATE :2006/01/09
REVISED DATE :
GT6301K
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
30V
1
640mA
Description
The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The GT6301K is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
*RoHS Compliant
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
0.30 0.55
0 0.10
0° 10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Ratings
30
±16
640
500
950
1.2
0.01
-55 ~ +150
Value
110
Unit
V
V
mA
mA
mA
W
W/
Unit
/W
GT6301K
Page: 1/4




GTM

GT6301K Datasheet Preview

GT6301K Datasheet

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

No Preview Available !

ISSUED DATE :2006/01/09
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.06
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
1.5
V VDS=VGS, ID=250uA
Forward Transconductance
gfs - 600 - mS VDS=10V, ID=600mA
Gate-Source Leakage Current
IGSS - - ±10 uA VGS= ±16V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=30V, VGS=0
- 100 uA VDS=24V, VGS=0
- -1
VGS=10V, ID=500mA
Static Drain-Source On-Resistance RDS(ON)
-
-
2
VGS=4.5V, ID=400mA
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
- -3
VGS=2.7V, ID=200mA
Qg - 1 1.6
ID=600mA
Qgs - 0.5 - nC VDS=50V
Qgd - 0.5 -
VGS=4.5V
Td(on) - 12 -
VDS=30V
Tr
Td(off)
-
-
10
56
-
-
ID=600mA
ns VGS=10V
RG=3.3
Tf - 29 -
RD=52
Ciss
Coss
Crss
- 32 50
VGS=0V
- 8 - pF VDS=25V
-6-
f=1.0MHz
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward On Voltage2
VSD - - 1.2 V IS=1.2A, VGS=0V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board t 5sec; 180 /W when mounted on Min. copper pad.
GT6301K
Page: 2/4


Part Number GT6301K
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Maker GTM
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GT6301K Datasheet PDF






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