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GT6301K - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

The GT6301K is universally used for all commercial-industrial applications.

Features

  • Simple Drive Requirement.
  • Small Package Outline.
  • RoHS Compliant Package Dimensions Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V Continuous Drain Current3, VGS@10V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25к ID @TA=70к IDM PD @TA=25к Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Symbol R.

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Datasheet preview – GT6301K

Datasheet Details

Part number GT6301K
Manufacturer GTM
File Size 275.96 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet download datasheet GT6301K Datasheet
Additional preview pages of the GT6301K datasheet.

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Full PDF Text Transcription

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Pb Free Plating Product ISSUED DATE :2006/01/09 REVISED DATE : GT6301K N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 1 640mA Description The GT6301K utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GT6301K is universally used for all commercial-industrial applications.
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