900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






GTM

GT6924E Datasheet Preview

GT6924E Datasheet

N-CHANNEL MOSFET

No Preview Available !

www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/25
REVISED DATE :
GT6924E
N-CHANNEL MOSFET WITH SCHOTTKY DIODE
BVDSS
RDS(ON)
ID
20V
600m
1A
Description
The GM2306 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
Features
*Lower on-resistance
*Fast Switching Characteristic
*Included Schottky Diode
Package Dimensions
Absolute Maximum Ratings
Parameter
Drain-Source Voltage (MOSFET)
Gate-Source Voltage (MOSFET)
Continuous Drain Current3 (MOSFET)
Continuous Drain Current3 (MOSFET)
Pulsed Drain Current1 (MOSFET)
Reverse Voltage (Schottky)
Average Forward Current (Schottky)
Pulsed Forward Current1 (Schottky)
Total Power Dissipation (MOSFET)
Total Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID @TA=25
ID @TA=70
IDM
VKA
IF
IFM
PD @TA=25
Tj, Tstg
Thermal Data
Parameter
Thermal Resistance Junction-ambient3 (MOSFET) Max.
Thermal Resistance Junction-ambient3 (Schottky) Max.
Symbol
Rthj-a
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.60 3.00
1.40 1.80
0.30 0.55
0 0.10
0° 10°
REF.
G
H
I
J
K
L
Dimensions
Millimeter
1.90 REF.
1.20 REF.
0.12 REF.
0.37 REF.
0.60 REF.
0.95 REF.
Ratings
20
±6
1.0
0.8
8
20
0.5
2.0
0.9
0.9
-55 ~ +125
Value
110
110
Unit
V
V
A
A
A
V
A
A
W
W
Unit
/W
/W
GT6924E
Page: 1/4




GTM

GT6924E Datasheet Preview

GT6924E Datasheet

N-CHANNEL MOSFET

No Preview Available !

ISSUED DATE :2006/01/25
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.02
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
VGS(th)
0.5
-
1.2
V VDS=VGS, ID=250uA
Forward Transconductance
gfs - 1 - S VDS=5V, ID=600mA
Gate-Source Leakage Current
IGSS - - ±10 uA VGS= ± 6V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
IDSS
-
-
- 1 uA VDS=20V, VGS=0
- 10 uA VDS=16V, VGS=0
Static Drain-Source On-Resistance RDS(ON)
Total Gate Charge2
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
- 600 m VGS=4.5V, ID=1A
- 850
VGS=2.5V, ID=0.5A
1.3 2
ID=600mA
0.3 - nC VDS=16V
0.5 -
VGS=4.5V
21 -
53 -
100 -
125 -
VDS=10V
ID=600mA
Ns VGS=5V
RG=3.3
RD=16.7
38 60
VGS=0V
17 - pF VDS=10V
12 -
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VSD
Min.
-
Typ.
-
Max.
1.2
Unit Test Conditions
V IS=750mA, VGS=0V
Schottky Characteristics (Tj = 25 )
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Forward Voltage Drop
Maximum Reverse Leakage Current
Junction Capacitance
VF
IRM
CT
- - 0.5 V IF=500mA
- - 100 uA VR=20V
- 21 - pF VR=10V
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board, t 5sec; 180 /W when mounted on Min. copper pad.
GT6924E
Page: 2/4


Part Number GT6924E
Description N-CHANNEL MOSFET
Maker GTM
PDF Download

GT6924E Datasheet PDF






Similar Datasheet

1 GT6924E N-CHANNEL MOSFET
GTM





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy