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GWS7301E Datasheet Preview

GWS7301E Datasheet

Dual 20V N-Channel Power MOSFET

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GWS7301E
GWS7301E – Dual 20V N-Channel Power MOSFET
www.DataSheet4U.com
General Description
The GWS7301E is a dual low threshold
gate protected MOFET designed for the
small battery, cell phone, and PDA
markets. Using ultra high density MOSFET
process and space saving small outline J-
lead package, performance normally found
in a TSSOP8 footprint has been squeezed
into the footprint of a TSOP6 package.
S1
G1
G2
Features
• 6.5A, 20V rDS(ON) = 18mtyp. at 4.5 Volts
• 5.5A, 20V rDS(ON) = 25mtyp. at 2.5 Volts
• Excellent thermal characteristics.
• Rated for High Electrical Overstress Performance of 15A
short circuit and over current.
• Integrated gate diodes provide Electro-Static Discharge
(ESD) protection of 2500V HBM.
S2
TSOPJW-8 Package
N/C S2 S2 G2
8765
YWLLX
GWS7301E
*
1 234
N/C S1 S1 G1
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Drain Currenta
TA=25oC
TA=70oC
Pulsed Drain Current
Maximum Power Dissipationa
TA=25oC
TA=70oC
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PD
TJ, Tstg
20
± 12
5.7 4.6
4.6 3.5
30
1.3 0.83
0.83 0.53
-55 to 150
Unit
V
A
W
oC
Thermal Resistance Ratings
Parameter
Junction-to-Ambient
Junction-to-Foot (Lead)
a Surface Mounted on FR4 Board.
SP-7301E-200-6 8/10/2006
t 10 sec
Steady Sate
Steady Sate
Symbol
RthJA
RthJF
Typ
81
135
70
Max
96
150
85
Unit
oC/W
1




GWS

GWS7301E Datasheet Preview

GWS7301E Datasheet

Dual 20V N-Channel Power MOSFET

No Preview Available !

GWS7301E
Electrical Characteristics (TJ = 25 oC unless otherwise noted)
www.DataSheet4U.com
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
Gate Threshold Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance rDS(on)
Source-Drain Diode Voltage
VSD
VGS = 0V, ID = 250uA
VGS = 0V, VDS = 20V
VDS = 0V VGS = +/-12V
VDS = VGS, ID = 250uA
VGS = 4.5V, ID = 6.5A
VGS = 2.5V, ID = 5.5A
VGS = 0, ID = 6.5A
20 V
1 uA
+/-10 uA
0.5 0.6 1.5 V
11 18 25 m
15 25 35
0.8 1.0 1.2 V
Dynamic
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Ciss
Coss
Crss
VDS = 10V, ID = 4.0A, VGS = 5.0V
VDS = 20V, VGS = 0V, f = 1 MHZ
12
870
320
240
nC
pF
SP-7301E-200-6 8/10/2006
2


Part Number GWS7301E
Description Dual 20V N-Channel Power MOSFET
Maker GWS
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