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Galaxy Semi-Conductor

BAV18 Datasheet Preview

BAV18 Datasheet

(BAVxx) SMALL SIGNAL SWITCHING DIODE

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BL GALAXY ELECTRICAL
SMALL SIGNAL SWITCHING DIODE
BAV17---BAV21
VOLTAGE RANGE: 20-200 V
CURRENT: 250 mA
FEATURES
Silicon epitaxial planar diode
High speed switching diode
500 m W power dissipation
DO - 35(GLASS)
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MECHANICAL DATA
Case: DO-35,glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 gram s
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
am bient temperature unless otherwise specified.
MAXIMUM RATINGS
Reverse voltage
Peak reverse voltage
Average forw ard rectified current
BAV17
BAV18
VR 20
50
VRM
25
60
Half w ave rectification w ith resist.load
I(AV)
@TA=25 and f 50Hz
Forw ard surge current @ t<1s and TJ=25
IFSM
Pow er dissipation
@ TA=25
Ptot
Thermal resistance junction to ambient
RθJA
Junction temperature
TJ
Storage temperature range
TSTG
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
BAV19
100
120
2501)
1.0
5001)
350
175
-55 --- +175
ELECTRICAL CHARACTERISTICS
Forw ard voltage @ IF=100mA
VF
MIN
-
TYP
-
Leakage current
at reverse voltage
@Tj=25
@Tj=100
-
IR
-
Capacitance @ VF=VR=0V f=1MHZ
Reverse recovery time
CJ
-
from IF=30mA to IR=30mA
from IRR=3mA, RL=100Ω.
trr -
1)Valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature.
-
-
1.5
-
BAV20
150
200
BAV21
200
250
UNITS
V
V
mA
A
mW
K/W
MAX
1.0
100
15
-
50
UNITS
V
nA
µA
pF
ns
www.galaxycn.com
Document Number 0268008
BLGALAXY ELECTRICAL
1.




Galaxy Semi-Conductor

BAV18 Datasheet Preview

BAV18 Datasheet

(BAVxx) SMALL SIGNAL SWITCHING DIODE

No Preview Available !

RATINGS AND CHARACTERISTIC CURVES
BAV17---BAV21
FIG.1 -- FORWARD CHARACTERISTICS
mA
1000
100
10
IF
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1
TJ=100
TJ=25
.1
.01 0 .2 .4 .6 .8 1.0V
VF
FIG.3 -- ADMISSIBLE POWER DISSLPATION VERSUS
AMBIENT TEMPERATURE
mW
500
400
P tot
300
200
100
1
0
100 200
TA
FIG.5 -- DYNAMIC FORWARD RESISTANCE VERSUS
FORWARD CURRENT
FIG.2 -- ADMISSIBLE FORWARD CURRENT VERSUS
AMBIENT TEMPERATURE
A
.3
IO,I F
.2
DC CURRENT IF
CURRENT (RECTIF.) IF(AV)
.1
1 0 30 60 90 120 150
TA
FIG.4 -- LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
1000
I R (T J )
I R(25 )
100
10
1
0.1
0
VR=50V
100
200
TJ
FIG.6 -- CAPACITANCE VERSUS REVERSE VOLTAGE
100
50
rF
20
10
5
2
1
12
5 10
20 50 100 mA
IF
2
1.8 TJ=25
1.6
1.4
CJ 1.2
1
.8
.6
.4
.2
0 .1 .2 .5 1 2 5 10 20 50 100V
VR
Document Number 0268008
BLGALAXY ELECTRICAL
www.galaxycn.com
2.


Part Number BAV18
Description (BAVxx) SMALL SIGNAL SWITCHING DIODE
Maker Galaxy Semi-Conductor
PDF Download

BAV18 Datasheet PDF






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