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BAV10 Datasheet - NXP

High-speed diode

BAV10 Features

* Hermetically sealed leaded glass SOD27 (DO-35) package

* High switching speed: max. 6 ns

* General application

* Continuous reverse voltage: max. 60 V

* Repetitive peak reverse voltage: max. 60 V

* Repetitive peak forward current: max. 600 mA. The di

BAV10 General Description

The BAV10 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package. a MAM246 APPLICATIONS * High-speed switching. Fig.1 Simplified outline (SOD27; DO-35) and symbol. LIMITING VALUES In accordance with.

BAV10 Datasheet (34.61 KB)

Preview of BAV10 PDF

Datasheet Details

Part number:

BAV10

Manufacturer:

NXP ↗

File Size:

34.61 KB

Description:

High-speed diode.
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product specification Supersedes data of April 1996 1996 Sep 16 Philips Semiconduc.

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BAV10 High-speed diode NXP

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