High-speed Datasheet | Specifications & PDF Download

PC810 PC810 s Features 1. High speed response under high resistance load ( t off : MAX. 1ms at I F = 1mA, VCC = 5V, R L = 110k Ω ) 2. High current tr

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UNISONIC TECHNOLOGIES CO., LTD LM318 LINEAR INTEGRATED CIRCUIT HIGH SPEED OPERATIONAL AMPLIFIER  DESCRIPTION The UTC LM318 is a precision, high

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ME6118 800mA Adjustable Voltage High Speed LDO Regulators ME6118 Series General Description The ME6118 series are highly accurate, low noise, LDO Vo

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DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS 1N914 THRU 1N 1N 4148 4454 TECHNICAL SPECIFICATIONS OF HIGH SPEED SWITCHING DIODES VOLTAGE RANGE

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74HC595D Features ● 8-bit serial input ● 8-bit serial or parallel output ● Tri-state output register ● Shift register with direct clear ● Shift outpu

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www.eicsemi.com BAV99 PRV : 85 Volts Io : 125 mA FEATURES : * Small plastic SMD package * High switching speed : max. 4 ns * Continuous reverse volta

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2N2219A ® 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec

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SIT1040 5V, ±40V BUS Protection, 1Mbps High Speed CAN transceiver FEATURES ➢ Fully compatible with the ISO 11898 standard ➢ Thermally protected ➢ I

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IGP01N120H2 IGD01N120H2 HighSpeed 2-Technology • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topol

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2SK2225 1500V - 2A - MOS FET High Speed Power Switching Application High speed power switching Features  High breakdown voltage (VDSS = 1500 V)  Hig

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DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product data sheet Supersedes data of 2002 Jan 23 2004 Aug 10 NXP Semic

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DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-

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www.eicsemi.com BAV100 ~ BAV103 FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V

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Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A VCES 600 V 600 V IC25 50 A 50 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions

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MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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XN297 2.4GHz ： ‹ 2400~2483MHz ‹ ： 12Mbps ‹ SPI ：0~8Mbps ‹ ‹ GFSK ‹ ‹ ‹ ‹ ， ‹ 20QFN 4mm×4mm ‹ ±60ppm ‹ ‹ ：2.0~3.6V ‹ PCB ： ‹ ‹ ‹ ‹ ‹ ‹

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EV BOLT-DOWN FUSE AEL High Speed Fuse ELECTRICAL SPECIFICATIONS FEATURES:  80 Vdc EV high speed fuse  Rated Current: 30-800 A  Rated Breaking Cap

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www.eicsemi.com BAV100 ~ BAV103 FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 50 V, 100 V, 150 V

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1SS176 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 30 V • Repetitive peak reverse voltage:max. 35 V • Pb / RoHS Fre

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