diode Datasheet | Specifications & PDF Download

NOT RECOMMENDED FOR NEW DESIGN USE AZ1117C or AZ1117I Pb Lead-Free AZ1117 1A LOW DROPOUT LINEAR REGULATOR Description The AZ1117 is a series of lo

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74HC595 8-BIT SHIFT REGISTER WITH 8-BIT OUTPUT REGISTER Description The 74HC595 is an high speed CMOS device. An eight bit shift register accpets dat

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R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 12F020 1． PC 、UPS 、 DC-DC 2． l l l l 3． TO-220( RoHS ) 4． 1. (A1) 2 . (K) 3. (A2

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www.DataSheet4U.com RF Diodes 1series Fast recovery Diodes (Silicon Epitaxial Planar) RF 1 series zExternal dimensions (Unit : mm) CPD 1.5 5.5 2.3

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S4VB60 Bridge Diodes 600V, 4A Feature ・Input/Outout In-line ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): S4VB Equivalent circuit Absol

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5.0SMCJ12A 5.0SMCJ170CA 5.0SMCJ12A 5.0SMCJ170CA SMD Transient Voltage Suppressor Diodes SMD Spannungs-Begrenzer-Dioden PPPM = 5000 W PM(AV)

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1N4728 THRU 1N4764 ZENER DIODES FEATURES DO-41 Glass ♦ Silicon Planar Power Zener Diodes ♦ For use in stabilizing and clipping circuits with high pow

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® WON-TOP ELECTRONICS Features  Diffused Junction  Low Forward Voltage Drop  High Current Capability  High Reliability  High Surge Current Capabi

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

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OBSOLETE – PART DISCONTINUED PART OBSOLETE USE S3A-S3M Series 1N5400 - 1N5408 3.0A RECTIFIER Features • Diffused Junction • High Current Capability

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DIODE Type : 30D2 FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability OUTLINE DRAWING Maximum Ratings Approx

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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NE555 PRECISION TIMER Description These devices are precision timing circuits capable of producing accurate time delays or oscillation. In the time-d

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WILLAS SO1.0TA-2SU3RFPAlCaEsMtOicUN-ET SnCcHaOTpTsKYuBlaARteRIEDRiRoEdCTeIFsIERS -20V- 200V SOD-123+ PACKAGE BAV70FM120-M+ BAV99 THRU BAW5F6M1200-M+

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Switching Diodes MA3X153, MA3X153A (MA153, MA153A) Silicon epitaxial planar type For switching circuits s Features • Small terminal capacitance, Ct

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R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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ZENER DIODES FEATURES For use in stabilizing and clipping circuits with high power rating.Standard zener voltage tolerance is ±10%. Add suffix A for

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Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Curren

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