BAV199W Datasheet - NXP

Low-leakage double diode

BAV199W Features

* Small plastic SMD package

* Low leakage current: typ. 3 pA

* Switching time: typ. 0.8 µs

* Continuous reverse voltage: max. 75 V

* Repetitive peak reverse voltage: max. 85 V

* Repetitive peak forward current: max. 500 mA. APPLICATIONS

* Low-l

BAV199W General Description

Epitaxial, medium-speed switching, double diode in a small plastic SOT323 (SC-70) SMD package. The diodes are connected in series. Marking code: JY- = made in Hong Kong; JYt = made in Malaysia. 1 Top view 2 MAM391 BAV199W PINNING PIN 1 2 3 anode cathode cathode; anode DESCRIPTION handbook, halfpa.

BAV199W Datasheet (71.91 KB)

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BAV199W

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NXP ↗

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71.91 KB

Description:

Low-leakage double diode.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAV199W Low-leakage double diode Product speciﬁcation Supersedes data of 1998 Jan 09 1999 .

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BAV199W Low-leakage double diode NXP

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BAV199W Features

BAV199W General Description

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