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Galaxy Semi-Conductor Holdings Limited

2SC4081W Datasheet Preview

2SC4081W Datasheet

Silicon Epitaxial Planar Transistor

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BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
FEATURES
z Excellent hFE linearity.
z Complements the 2A1576A
Pb
Lead-free
Production specification
2SC4081W
www.DataSheet4UA.cPomPLICATIONS
z NPN Silicon Epitaxial Planar Transistor.
ORDERING INFORMATION
Type No.
Marking
2SC4081W
BQ/BR/BS
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
60
VCEO
Collector-Emitter Voltage
50
VEBO
Emitter-Base Voltage
6
IC Collector Current -Continuous
150
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55~150
Units
V
V
V
mA
mW
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Document number: BL/SSSTF002
Rev.A
www.galaxycn.com
1




Galaxy Semi-Conductor Holdings Limited

2SC4081W Datasheet Preview

2SC4081W Datasheet

Silicon Epitaxial Planar Transistor

No Preview Available !

BL Galaxy Electrical
Silicon Epitaxial Planar Transistor
Production specification
2SC4081W
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50μA,IE=0
60 V
Collector-emitter breakdown voltage V(BR)CEO
www.DataSheet4U.com
Emitter-base breakdown voltage
V(BR)EBO
IC=1mA,IB=0
IE=50μA,IC=0
50 V
6V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1 μA
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
VCE(sat)
fT
Cob
CLASSIFICATION OF hFE
Rank
Q
Range
120-270
Marking
BQ
VEB=6V,IC=0
0.1 μA
VCE=6V,IC=1mA
120 560
ICE=50mA,IB=5mA
VCE=12V, IC= 2mA,f=30MHz
VCB=12V,IE=0,f=1MHz
0.4
180
3.5
V
GHz
pF
R
180-390
BR
S
270-560
BS
Document number: BL/SSSTF002
Rev.A
www.galaxycn.com
2


Part Number 2SC4081W
Description Silicon Epitaxial Planar Transistor
Maker Galaxy Semi-Conductor Holdings Limited
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2SC4081W Datasheet PDF





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