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2SC3356W - Silicon NPN Transistor

Download the 2SC3356W datasheet PDF. This datasheet also covers the 2SC3356W_GalaxySemi variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz Production specification 2SC3356W Pb Lead-free z High power gain:MAG=13dB TYP. @VCE=10V. IC=20mA,f=1.0GHz.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC3356W_GalaxySemi-ConductorHoldingsLimited.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SC3356W
Manufacturer Galaxy Semi-Conductor Holdings Limited
File Size 196.65 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SC3356W Datasheet

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2SC4081W Silicon Epitaxial Planar Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz Production specification 2SC3356W Pb Lead-free z High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No. 2SC3356W Marking R23/R24/R25 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value 20 12 3 100 200 -55~150 Units V V V mA mW ℃ Document number: BL/SSSTF001 Rev.A www.galaxycn.com 1 www.DataSheet4U.