Datasheet Summary
DATA SHEET SHEET DATA
SILICON TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
- 0.05
+0.1
PACKAGE DIMENSIONS (Units: mm)
2.8±0.2 1.5 0.65
- 0.15
+0.1
Features
- Low Noise and High Gain
0.95 0.95 2.9±0.2
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
- High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0...
