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2SC3356 - NPN Silicon Transistor

General Description

The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has dynamic range and good current characteristic.

0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 0.15 +0.1

Key Features

  • Low Noise and High Gain 0.95 0.95 2.9±0.2 NF = 1.1 dB TYP. , Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz.
  • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 0.4 −0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 −0.15 +0.1 FEATURES • Low Noise and High Gain 0.95 0.95 2.9±0.2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz • High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.