NEC 2SC3356
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.| Part No. | 2SC3356 |
|---|---|
| Datasheet | 2SC3356 Download |
| Manufacturer |  NEC |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
DESCRIPTION
0.4 −0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 −0.15 +0.1FEATURES
● Low Noise and High Gain 0.95 0.95 2.9±0.2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz● High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 2
ABSOLUTE MAXIMUM RATINGS
(TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 12 3.0 100 200 150 to +150 V V V mA mW C C 0.3 Marking 1.1 to 1.4 PIN CONNECTIONS 1. Emitter 2. Base 3. CollectorELECTRICAL CHARACTERISTICS
(TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Noise Figure SYMBOL ICBO IEBO hFE* fT Cre** 50 120 7 0.55 11.5 1.1 2.0 1.0 MIN. TYP. MAX. 1.0 1.0 300 GHz pF dB dB UNIT TEST CONDITIONS VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 VCE = 10 V...
