NEC 2SC3355
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.| Part No. | 2SC3355 |
|---|---|
| Datasheet | 2SC3355 Download |
| Manufacturer |  NEC |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
DESCRIPTION
PACKAGE DIMENSIONS in millimeters (inches) 5.2 MAX. (0.204 MAX.)FEATURES
● Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz● High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX.) 5.5 MAX. (0.216 MAX.)
ABSOLUTE MAXIMUM RATINGS
(TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT Tj Tstg 65 20 12 3.0 100 600 150 to +150 V V V mA mW C C 1.27 (0.05) 2.54 (0.1) 1 2 3 1. Base 2. Emitter 3. Collector EIAJ : SC-43B JEDEC : TO-92 IEC : PA33ELECTRICAL CHARACTERISTICS
(TA = 25 C) CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain Bandwidth Product Output Capacitance Insertion Power Gain Noise Figure Noise Figure SYMBOL ICBO IEBO hFE fT Cob 50 120 6.5 0.65 2 MIN.
