Datasheet Summary
DATA SHEET SHEET DATA
SILICON TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.
PACKAGE DIMENSIONS in millimeters (inches)
5.2 MAX. (0.204 MAX.)
Features
- Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
- High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
0.5 (0.02)
1.77 MAX. (0.069 MAX.) 5.5 MAX. (0.216...
