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2SC3355 Datasheet NPN Silicon Transistor

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL.

General Description

The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has lange dynamic range and good current characteristic.

PACKAGE DIMENSIONS in millimeters (inches) 5.2 MAX.

Key Features

  • Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP. , Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz.
  • High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz 0.5 (0.02) 1.77 MAX. (0.069 MAX. ) 5.5 MAX. (0.216 MAX. ).

2SC3355 Distributor

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