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2SC3357

Manufacturer: NEC (now Renesas Electronics)

2SC3357 datasheet by NEC (now Renesas Electronics).

2SC3357 datasheet preview

2SC3357 Datasheet Details

Part number 2SC3357
Datasheet 2SC3357_NEC.pdf
File Size 77.51 KB
Manufacturer NEC (now Renesas Electronics)
Description NPN Silicon Transistor
2SC3357 page 2 2SC3357 page 3

2SC3357 Overview

The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic. 4.5±0.1 PACKAGE DIMENSIONS (Unit:.

2SC3357 Key Features

  • Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
  • Large PT in Small Package PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10

2SC3357 from other manufacturers

View 2SC3357 datasheet index

Brand Logo Part Number Description Other Manufacturers
UTC Logo 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR UTC
CEL Logo 2SC3357 NPN SILICON RF TRANSISTOR CEL
GME Logo 2SC3357 NPN Silicon Transistor GME
Kexin Logo 2SC3357 NPN Silicon RF Transistor Kexin
Inchange Semiconductor Logo 2SC3357 Silicon NPN RF Transistor Inchange Semiconductor
NEC (now Renesas Electronics) logo - Manufacturer

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