NEC 2SC3357
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.| Part No. | 2SC3357 |
|---|---|
| Datasheet | 2SC3357 Download |
| Manufacturer |  NEC |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
DESCRIPTION
4.5±0.1 PACKAGE DIMENSIONS (Unit: mm)FEATURES
● Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz● Large PT in Small Package PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, 0.8 MIN. E 0.42 ±0.06 1.6±0.2 1.5±0.1 C B 0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05 −0.03
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Thermal Resistance Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT * Rth(j-a)* Tj Tstg 20 12 3.0 100 1.2 62.5 150 −65 to +150 V V V mA W °C/W °C °C Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89) * mounted on 16 cm2 × 0.7 mm Ceramic Substrate Document No. P10357EJ4V1DS00 (4th edition) Date Published March 1997 N Printed in Japan 4.0±0.25 2.5±0.1 © 1985 2SC3357ELECTRICAL CHARACTERISTICS
(TA = 25 °C) CHARACTERIST...
