2SC3357 Datasheet NPN Silicon Transistor

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET SILICON TRANSISTOR 2SC3357 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI.

Datasheet Details

The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has large dynamic range and good current characteristic.

4.5±0.1 PACKAGE DIMENSIONS (Unit: mm)

Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz.
Large PT in Small Package PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP. , Ga = 8.0 dB TYP. @VCE = 10 V, 0.8 MIN. E 0.42 ±0.06 1.6±0.2 1.5±0.1 C B 0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05.
0.03.

Part Number	Description	Manufacturer
2SC3357	NPN EPITAXIAL SILICON RF TRANSISTOR	UTC
2SC3357	NPN SILICON RF TRANSISTOR	CEL
2SC3357	NPN Silicon Transistor	GME
2SC3357	NPN Silicon RF Transistor	Kexin
2SC3357	Silicon NPN RF Transistor	Inchange Semiconductor

Part Number	Description
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2SC3218-M	NPN SILICON EPITAXIAL TRANSISTOR
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2SC3478A	NPN SILICON TRANSISTORS
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2SC3545	NPN Silicon Transistor