Datasheet Summary
DATA SHEET
SILICON TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.
4.5±0.1
PACKAGE DIMENSIONS
(Unit: mm)
Features
- Low Noise and High Gain IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
- Large PT in Small Package PT : 2 W with 16 cm2 × 0.7 mm Ceramic Substrate. NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
0.8 MIN. E
0.42 ±0.06
1.6±0.2
1.5±0.1
0.42±0.06 1.5 0.47 ±0.06 3.0 0.41 +0.05
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