2SC3356
2SC3356 is NPN Silicon Epitaxial Planar Transistor manufactured by Galaxy Microelectronics.
Features
- Low noise and high gain
- High power gain
- Ro HS pliant with Halogen-free
Mechanic al Data
- Case: SOT-23
- Molding pound: UL flammability classification rating 94V-0
- Terminals: Tin-plated; solderability per MIL-STD-202, Method 208
SOT-23
Ordering Information
Part Number 2SC3356-Q 2SC3356-R 2SC3356-S
Package SOT-23 SOT-23 SOT-23
Shipping Quantity 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel
Marking Code R23 R24 R25
Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (continuous)
Symbol VCBO VCEO VEBO IC
Value 20 12 3 100
Unit V V V m A
Thermal Characteristics
Parameter
Symbol
Collector Power Dissipation
- 1 Thermal Resistance Junction-to-Air
- 1 Thermal Resistance Junction-to-Case
- 1 Thermal Resistance Junction-to-Lead
- 1 Junction Temperature Range Storage Temperature Range
PC RθJA RθJC RθJL TJ TSTG
Note 1: The data tested by surface mounted on a 16mm
- 18mm
- 2mm FR4-epoxy P.C.B
Value 200 375 294 226
-55 ~ +150 -65 ~ +150
Unit m W °C/W °C/W °C/W °C °C
STM0045A: July 2020
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NPN Silicon Epitaxial Planar Transistor 2SC3356
Electrical Characteristics (@ TA = 25°C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Transition...