• Part: 2SC3356
  • Description: NPN Silicon Epitaxial Planar Transistor
  • Category: Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 222.82 KB
Download 2SC3356 Datasheet PDF
Galaxy Microelectronics
2SC3356
2SC3356 is NPN Silicon Epitaxial Planar Transistor manufactured by Galaxy Microelectronics.
Features - Low noise and high gain - High power gain - Ro HS pliant with Halogen-free Mechanic al Data - Case: SOT-23 - Molding pound: UL flammability classification rating 94V-0 - Terminals: Tin-plated; solderability per MIL-STD-202, Method 208 SOT-23 Ordering Information Part Number 2SC3356-Q 2SC3356-R 2SC3356-S Package SOT-23 SOT-23 SOT-23 Shipping Quantity 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel Marking Code R23 R24 R25 Maximum Ratings (@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (continuous) Symbol VCBO VCEO VEBO IC Value 20 12 3 100 Unit V V V m A Thermal Characteristics Parameter Symbol Collector Power Dissipation - 1 Thermal Resistance Junction-to-Air - 1 Thermal Resistance Junction-to-Case - 1 Thermal Resistance Junction-to-Lead - 1 Junction Temperature Range Storage Temperature Range PC RθJA RθJC RθJL TJ TSTG Note 1: The data tested by surface mounted on a 16mm - 18mm - 2mm FR4-epoxy P.C.B Value 200 375 294 226 -55 ~ +150 -65 ~ +150 Unit m W °C/W °C/W °C/W °C °C STM0045A: July 2020 .gmesemi. NPN Silicon Epitaxial Planar Transistor 2SC3356 Electrical Characteristics (@ TA = 25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Transition...