NF = 1.1 dB TYP., Ga = 11 dB TYP.
High Power Gain MAG = 13 dB TYP.
Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low no| Part number | 2SC3356 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 399.63 KB |
| Description | Silicon NPN Transistor |
| Datasheet |
 2SC3356 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| 2SC3356 | NPN Silicon Transistor | NEC |
| 2SC3356 | NPN SILICON TRANSISTOR | UTC |
| 2SC3356 | NPN Transistor | Kexin |
| 2SC3356 | NPN Transistor | SeCoS |
| 2SC3356 | NPN Silicon RF Transistor | Renesas |
| Part Number | Description |
|---|---|
| 2SC3353 | Power Transistor |
| 2SC3355 | Silicon NPN RF Transistor |
| 2SC3357 | Silicon NPN RF Transistor |
| 2SC3303 | Silicon NPN Power Transistor |
| 2SC3371 | Power Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
