Datasheet Summary
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
DESCRIPTION
- Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
- High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low noise amplifier at VHF, UHF and CATV...
