Renesas Electronics 2SC3356
NPN Silicon RF Transistor
| Part No. | 2SC3356 |
|---|---|
| Datasheet | 2SC3356 Download |
| Manufacturer |  Renesas Electronics |
| Description | NPN Silicon RF Transistor |
| Buy | Stock & Price |
FEATURES
● Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz● High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz <R> ORDERING INFORMATION Part Number 2SC3356 2SC3356-T1B Order Number 2SC3356-A 2SC3356-T1B-A Package Quantity 3-pin Minimold 50 pcs (Non reel) (Pb-Free) 3 kpcs/reel Supplying Form
● 8 mm wide embossed taping
● Pin 3 (Collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS
(TA = +25°C) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC P Note tot Tj Tstg Ratings 20 12 3.0 100 200 150 −65 to +150 Unit V V V mA mW °C °C Note Free air CAUTION Observe precautions when handling because these devices are sensitive to electrostatic discharge. The mark <R> shows major revised points.
