2SC3357 Datasheet | Inchange Semiconductor

Part: 2SC3357
Description: Silicon NPN RF Transistor
Category: Transistor
Manufacturer: Inchange Semiconductor
Size: 188.50 KB

Inchange Semiconductor

2SC3357

Overview

Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Datasheets by Manufacturer

2SC3357 — Kexin Semiconductor — NPN Silicon RF Transistor
2SC3357 — CEL — NPN SILICON RF TRANSISTOR
2SC3357 — Galaxy Microelectronics — NPN Silicon Transistor
2SC3357 — NEC — NPN Silicon Transistor
2SC3357 — Renesas — NPN EPITAXIAL SILICON RF TRANSISTOR
2SC3357 — Unisonic Technologies — NPN EPITAXIAL SILICON RF TRANSISTOR
2SC3357 — AiT Semiconductor — NPN SILICON RF TRANSISTOR
2SC3357 — EVVO — NPN Transistors
2SC3356 — Unisonic Technologies — NPN SILICON TRANSISTOR
C3356 — NEC — 2SC3356