NF = 1.1 dB TYP., Ga = 8.0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP.
100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS| Part number | 2SC3357 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.50 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet |
 2SC3357 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| 2SC3357 | NPN Silicon Transistor | NEC |
| 2SC3357 | NPN EPITAXIAL SILICON RF TRANSISTOR | UTC |
| 2SC3357 | NPN SILICON RF TRANSISTOR | CEL |
| 2SC3357 | NPN Silicon Transistor | GME |
| 2SC3357 | Silicon NPN transistor | BLUE ROCKET ELECTRONICS |
| Part Number | Description |
|---|---|
| 2SC3353 | Power Transistor |
| 2SC3355 | Silicon NPN RF Transistor |
| 2SC3356 | Silicon NPN Transistor |
| 2SC3303 | Silicon NPN Power Transistor |
| 2SC3371 | Power Transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
