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2SC3357

Manufacturer: Galaxy Microelectronics

2SC3357 datasheet preview

Datasheet Details

Part number	2SC3357
Datasheet	2SC3357-GME.pdf
File Size	502.60 KB
Manufacturer	Galaxy Microelectronics
Description	NPN Silicon Transistor

2SC3357 Overview

Product Specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD.

2SC3357 Key Features

Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.
Large PT in Small Package PT : 2 W with 16 cm2
RoHS pliant with Halogen-free

2SC3357 Applications

The 2SC3357 is an NPN silicon epitaxial transistor designed For low noise amplifier at VHF, UHF and CATV band

2SC3357 from other manufacturers

See all manufacturers

Brand Logo	Part Number	Description	Other Manufacturers
	2SC3357	NPN Silicon Transistor	NEC
	2SC3357	NPN EPITAXIAL SILICON RF TRANSISTOR	UTC
	2SC3357	NPN SILICON RF TRANSISTOR	CEL
	2SC3357	NPN Silicon RF Transistor	Kexin
	2SC3357	Silicon NPN RF Transistor	Inchange Semiconductor

More Datasheets from Galaxy Microelectronics

See all Galaxy Microelectronics datasheets

Part Number	Description
2SC3356	NPN Silicon Epitaxial Planar Transistor
2SC3356W	NPN Silicon Epitaxial Planar Transistor
2SC3358	Silicon Epitaxial Planar Transistor
2SC3303	Silicon NPN Transistor
2SC3052	NPN Small Signal Surface Mount Transistor
2SC3125	Silicon Epitaxial Planar Transistor
2SC3149	NPN Transistor
2SC3420	NPN Transistor
2SC3650	General-Purpose Amplifier
2SC3930	NPN Silicon Transistor

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