Galaxy Century Microelectronics 2SC3357
The 2SC3357 is an NPN silicon epitaxial transistor designed For low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.| Part No. | 2SC3357 |
|---|---|
| Datasheet | 2SC3357 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | NPN Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,● Large PT in Small Package PT : 2 W with 16 cm2*
● RoHS compliant with Halogen-free 2SC3357
APPLICATIONS
●● ORDERING INFORMATION Type No. Marking 2SC3357-H RH 2SC3357-F RF 2SC3357-E RE SOT-89 Package Code SOT-89 SOT-89 SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PT 备注 1 Total Power Dissipation Rth(j-a) 备注 1 Thermal Resistance Tj Junction Temperature Tstg Storage Temperature 备注 1：mounted on 16 cm2 0.7 mm Ceramic Substrate STM0238A: May 2019 [P] Value 20 12 3.0 100 1.2 62.5 150 -65 to +150 Units V V V mA W C/W ℃ ℃ 1 Product Specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD 2SC3357
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditio...
