- Part: 2SC3357
- Description: NPN Silicon Transistor
- Category: Transistor
- Manufacturer: Galaxy Microelectronics
- Size: 502.60 KB
Overview
- Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
- Large PT in Small Package PT : 2 W with 16 cm2*
- RoHS compliant with Halogen-free 2SC3357
Datasheets by Manufacturer
- 2SC3357 — CEL — NPN SILICON RF TRANSISTOR
- 2SC3357 — NEC — NPN Silicon Transistor
- 2SC3357 — Renesas — NPN EPITAXIAL SILICON RF TRANSISTOR
- 2SC3357 — Unisonic Technologies — NPN EPITAXIAL SILICON RF TRANSISTOR
- 2SC3357 — AiT Semiconductor — NPN SILICON RF TRANSISTOR
- 2SC3357 — EVVO — NPN Transistors
- 2SC3354 — Panasonic — Silicon NPN Transistor
- 2SC3359S — ROHM — Power Transistor
- C3355 — NEC — 2SC3355
- 2SC3353 — Inchange Semiconductor — Power Transistor
