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2SC3357 - NPN Silicon Transistor

Key Features

  • Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @VCE = 10 V,.
  • Large PT in Small Package PT : 2 W with 16 cm2.
  • RoHS compliant with Halogen-free 2SC3357.

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Full PDF Text Transcription (Reference)

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Product Specification NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD FEATURES  Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,  Large PT in Small Package PT : 2 W with 16 cm2*  RoHS compliant with Halogen-free 2SC3357 APPLICATIONS  The 2SC3357 is an NPN silicon epitaxial transistor designed For low noise amplifier at VHF, UHF and CATV band.  It has large dynamic range and good current characteristic. ORDERING INFORMATION Type No.