2SC3356W
2SC3356W is NPN Silicon Epitaxial Planar Transistor manufactured by Galaxy Microelectronics.
Features
- Low noise and high gain
- High power gain
- Ro HS pliant with Halogen-free
Mechanic al Data
- Case: SOT-323
- Molding pound: UL flammability classification rating 94V-0
- Terminals: Tin-plated; solderability per MIL-STD-202, Method 208
SOT-323
Ordering Information
Part Number 2SC3356W-Q 2SC3356W-R 2SC3356W-S
Package SOT-323 SOT-323 SOT-323
Shipping Quantity 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel
Marking Code R23 R24 R25
Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Current (continuous)
Symbol VCBO VCEO VEBO IC
Value 20 12 3 100
Unit V V V m A
Thermal Characteristics
Parameter
Symbol
Collector Power Dissipation
- 1 Thermal Resistance Junction-to-Air
- 1 Thermal Resistance Junction-to-Case
- 1 Thermal Resistance Junction-to-Lead
- 1 Junction Temperature Range Storage Temperature Range
PC RθJA RθJC RθJL TJ TSTG
Note 1: The data tested by surface mounted on a 15mm
- 15mm
- 1mm FR4-epoxy P.C.B
Value 200 625 427 322
-55 ~ +150 -65 ~ +150
Unit m W °C/W °C/W °C/W °C °C
STM0401A: September 2020
.gmesemi.
NPN Silicon Epitaxial Planar Transistor 2SC3356W
Electrical Characteristics (@ TA = 25°C unless otherwise specified)
Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-emitter Saturation Voltage Base-emitter Saturation Voltage Transition...
