Galaxy Century Microelectronics 2SC3358
Silicon Epitaxial Planar Transistor
| Part No. | 2SC3358 |
|---|---|
| Datasheet | 2SC3358 Download |
| Manufacturer | Galaxy Century Microelectronics |
| Description | Silicon Epitaxial Planar Transistor |
| Buy | Stock & Price |
FEATURES
z Low noise and high gain. NF=1.1dB TYP.,Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz z High power gain. MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz. Pb Lead-free 2SC3358APPLICATIONS
z Designed for low noise amplifier at VHF,UHF and CATV band. SOT-363 ORDERING INFORMATION Type No. Marking 2SC3358 R23/R24/R25 Package Code SOT-363 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 20 VCEO Collector-Emitter Voltage 12 VEBO Emitter-Base Voltage 3 IC Collector Current -Continuous 100 PC Collector Dissipation 200 Tj,Tstg Junction and Storage Temperature -65 to +150 Units V V V mA mW ℃ C142 Rev.A 1 Production specification Silicon Epitaxial Planar Transistor 2SC3358ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)
