• Part: 2SC3358
  • Description: Silicon Epitaxial Planar Transistor
  • Category: Transistor
  • Manufacturer: Galaxy Microelectronics
  • Size: 155.17 KB
Download 2SC3358 Datasheet PDF
Galaxy Microelectronics
2SC3358
FEATURES z Low noise and high gain. NF=1.1d B TYP.,Ga=11d B TYP. @VCE=10V,IC=7m A, f=1.0GHz z High power gain. MAG=13d B TYP. @VCE=10V,IC=20m A,f=1.0GHz. Pb Lead-free APPLICATIONS z Designed for low noise amplifier at VHF,UHF and CATV band. SOT-363 ORDERING INFORMATION Type No. Marking R23/R24/R25 Package Code SOT-363 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Dissipation Tj,Tstg Junction and Storage Temperature -65 to +150 Units V V V m A m W ℃ C142 Rev.A .gmicroelec. 1 Production specification Silicon Epitaxial Planar Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown...