EVVO 2SC3356
NPN Transistors
| Part No. | 2SC3356 |
|---|---|
| Datasheet | 2SC3356 Download |
| Manufacturer |  EVVO |
| Description | NPN Transistors |
| Buy | Stock & Price |
FEATURES
Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHzABSOLUTE MAXIMUM RATINGS
Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Rating 20 12 3.0 100 200 150 -65 to +150 3 2 1. Gate 1 2. Source 3. Drain● Simplified outline(SOT23) Unit V V V mA mW
ELECTRICAL CHARACTERISTICS
Ta = 25 Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage * Base - emitter saturation voltage * DC current gain * Insertion power gain Noise figure Reverse transfer capacitance Transition frequency Symbol Test Conditions Min Typ Max Unit VCBO Ic= 100 μA， IE= 0 20 VCEO Ic= 1 mA， IB= 0 12 V VEBO IE= 100 uA， IC= 0 3 ICBO IEBO VCB= 10 V , IE= 0 VEB= 3V , IC=0 1 uA 1 VCE(sat) IC=50 mA, IB=5mA VBE(sat) IC=50 mA, IB=5mA 0.
