2SC3357 - NPN SILICON RF TRANSISTOR

CEL

Key Features

Low noise and high gain NF = 1.1 dB TYP. , Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz.
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz.
Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2  0.7 mm (t) ceramic substrate).
Small package : 3-pin power minimold package.

2SC3357 npn silicon rf transistor by CEL - Datasheet Preview

Datasheet Details

Part number	2SC3357
Manufacturer	CEL
File Size	195.46 KB
Description	NPN SILICON RF TRANSISTOR
Datasheet	2SC3357 Datasheet

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Full PDF Text Transcription (Reference)

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NPN SILICON RF TRANSISTOR NE85634 / 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz • Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2  0.