Datasheet Summary
NPN SILICON RF TRANSISTOR
NE85634 / 2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
Features
- Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
- High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
- Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 0.7 mm (t) ceramic substrate)
- Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number NE85634-A 2SC3357-A NE85634-T1-A 2SC3357-T1-A
Quantity 25 pcs (Non reel) (Pb-Free)
Supplying Form
- 12 mm wide embossed taping
1 kpcs/reel (Pb-Free)
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