Renesas Electronics 2SC3357
NPN EPITAXIAL SILICON RF TRANSISTOR
| Part No. | 2SC3357 |
|---|---|
| Datasheet | 2SC3357 Download |
| Manufacturer |  Renesas Electronics |
| Description | NPN EPITAXIAL SILICON RF TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● Low noise and high gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz● High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
● Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate)
● Small package : 3-pin power minimold package ORDERING INFORMATION Part Number 2SC3357 2SC3357-T1 Quantity 25 pcs (Non reel) 1 kpcs/reel Supplying Form
● 12 mm wide embossed taping
● Collector face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS
(TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current Total Power Dissipation IC 100 mA P Note tot 1.2 W Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
