2SC3357
2SC3357 is manufactured by Renesas.
DATA SHEET
NPN SILICON RF TRANSISTOR
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
3-PIN POWER MINIMOLD
Features
- Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
- High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
- Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate)
- Small package : 3-pin power minimold package
ORDERING INFORMATION
Part Number 2SC3357 2SC3357-T1
Quantity 25 pcs (Non reel) 1 kpcs/reel
Supplying Form
- 12 mm wide embossed taping
- Collector face the perforation side of the...
