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2SC3357 Datasheet NPN Epitaxial Silicon Rf Transistor

Manufacturer: Renesas

Overview: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3357 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER.

2SC3357 datasheet preview

Datasheet Details

Part number	2SC3357
Manufacturer	Renesas
File Size	132.42 KB
Description	NPN EPITAXIAL SILICON RF TRANSISTOR
Datasheet	2SC3357_Renesas.pdf

Key Features

Low noise and high gain NF = 1.1 dB TYP. , Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz.
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz.
Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate).
Small package : 3-pin power minimold package.

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