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2SC3357 Datasheet NPN Epitaxial Silicon Rf Transistor

Manufacturer: Unisonic Technologies

Overview: UNISONIC TECHNOLOGIES CO., LTD 2SC3357 NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION POWER MINI MOLD.

General Description

The UTC 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.

It has large dynamic range and good current characteristic.

 ORDERING INFORMATION Order Number Lead Free Halogen Free 2SC3357L-xx-AB3-R 2SC3357G-xx-AB3-R Note: Pin Assignment: B: Base C: Collector E: Emitter Package SOT-89 Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 2 QW-R221-043.B 2SC3357 NPN SILICON TRANSISTOR  ABSOLUATE MAXIUM RATINGS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage Collector to Emitter Voltage VCBO VCEO 20 V 12 V Emitter to Base Voltage Collector Current VEBO IC 3V 100 mA Collector Dissipation Junction Temperature PC 1.2 W TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

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