Unisonic Technologies 2SC3355
NPN SILICON EPITAXIAL TRANSISTOR
| Part No. | 2SC3355 |
|---|---|
| Datasheet | 2SC3355 Download |
| Manufacturer |  Unisonic Technologies |
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
FEATURES
* Low Noise and High Gain * High Power Gain 1 TO-92● ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SC3355L-T92-B 2SC3355G-T92-B 2SC3355L-T92-K 2SC3355G-T92-K Note: Pin Assignment: B: Base E: Emitter C: Collector Package TO-92 TO-92 Pin Assignment 123 BEC BEC 2SC3355L-T92-B (1)Packing Type (1) B: Tape Box, K: Bulk (2)Package Type (3)Lead Free (2) T92: TO-92 (3) L: Lead Free, G: Halogen Free Packing Tape Box Bulk
● MARKING INFORMATION PACKAGE TO-92 MARKING Copyright © 2014 Unisonic Technologies Co., LTD 1 of 3 QW-R201-036.C 2SC3355 NPN SILICON EPITAXIAL TRANSISTOR
● ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector current IC 100 mA Total power dissipation PT 600 mW Junction Temperature TJ 125 °C Operating Temperature TOPR -20 ~ +85 °C Storage Temperature TSTG -40 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
