Inchange Semiconductor 2SC3355
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. The information contained herein is presented only as a guide for the applications of our products.| Part No. | 2SC3355 |
|---|---|
| Datasheet | 2SC3355 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Noise NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz●High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous Pc Collector Power Dissipation @TC=25℃ Tj Junction Temperature 100 mA 500 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC3355● isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC3355
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IEBO Emitter Cutoff Current VEB = 1.0 V, IC = 0 0.1 uA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 uA hFE DC Current Gain IC= 20mA; VCE= 10V 50 150 250 fT Current-Gain—Bandwidth Product VCE=10V,IC=20mA,f=1GHz 6.5 GHz Cre Output Capacitance VCB=1...