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2SC3357 Datasheet PDF

Kexin Electronics 2SC3357

NPN Silicon RF Transistor

Part No. 2SC3357
Datasheet 2SC3357 Download
Manufacturer Kexin Electronics
Description NPN Silicon RF Transistor
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2SC3357 datasheet page 1 preview

FEATURES

Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz

ABSOLUTE MAXIMUM RATINGS

Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Thermal Resistance * mounted on 16 cm X 0.7 mm(t) Ceramic Substrate 2 Symbol VCBO VCEO VEBO IC PT* Tj Tstg Rth(j-a)* Rating 20 12 3.0 100 1.2 150 -65 to +150 62.5 Unit V V V mA W /W

ELECTRICAL CHARACTERISTICS

Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Insertion Power Gain Noise Figure Output Capacitance Transition frequency *1 Pulse Measurement PW 350 ms, Duty Cycle Symbol ICBO IEBO hFE *1 |S21e|2 NF Cob fT 2% Testconditons VCB = 10V,IE=0 VEB = 1.0V,IC=0 VCE =10V,Ic=20mA VCE = 10 V, IC = 20 mA, f = 1.0 GHz VCE = 10 V, IC = 7...