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2SC3357 - NPN Silicon RF Transistor

Key Features

  • Low Noise and High Gain NF = 1.1 dB TYP. , Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP. , Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Thermal Resistance.
  • mounted on 16 cm X 0.7 mm(t) Ceramic Substrate 2 Sy.

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SMD Type NPN Silicon RF Transistor 2SC3357 IC Transistors Features Low Noise and High Gain NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Thermal Resistance * mounted on 16 cm X 0.7 mm(t) Ceramic Substrate 2 Symbol VCBO VCEO VEBO IC PT* Tj Tstg Rth(j-a)* Rating 20 12 3.0 100 1.2 150 -65 to +150 62.