2SC3359S Datasheet PDF

2SC3359S Transistors Power Transistor (80V, 0.3A) 2SC3359S zFeatures 1) High breakdown voltage, BVCEO=80V 2) Low saturation voltage, typically VCE(sat) = 0.2V at IB=0.3A / 0.03A zElectrical characteristics (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 80 5 0.3 0.3 150 −55 to +150 Unit V V V A W C C zAbsolute maximum ratings (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector outoff current Emitter outoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 80 80 5 − − − 120 50 − Typ. − − − − − 0.2 − 150 5 Max. − − − 0.5 0.5 0.5 390 − 8 Unit V V V A A Conditions IC=1mA IC=50µA IE=50µA VCB=80V VEB=4V V − MHz pF VC/ICB=0.3...