Datasheet Summary
Transistors
Power Transistor (80V, 0.3A)
2SC3359S zFeatures
1) High breakdown voltage, BVCEO=80V 2) Low saturation voltage, typically VCE(sat) = 0.2V at IB=0.3A / 0.03A zElectrical characteristics (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Limits 80 80 5 0.3 0.3 150
- 55 to +150
Unit V V V A W C
C...