2SC3359S - Power Transistor

Product Overview

Rohm

Part number	2SC3359S
Manufacturer	ROHM
File Size	69.64 KB
Description	Power Transistor
Datasheet	2SC3359S Datasheet
Additional preview pages of the 2SC3359S datasheet.

1) High breakdown voltage, BVCEO=80V 2) Low saturation voltage, typically VCE(sat) = 0.2V at IB=0.3A / 0.03A zElectrical characteristics (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 80 5 0.3 0.3 150.
55 to +150 Unit V V V A W C C zAbsolute maximum ratings (Ta=25°C) Parameter Collector-emitter breakdown volta.

📁 Similar Datasheet

Other Datasheets by Rohm

2SC3377 - Epitaxial Planar NPN Silicon Transistor
2SC3270M - (2SC3270M / 2SC4015) Triple Diffused Planar NPN Silicon Transistors
2SC3271 - Triple Diffused Planar NPN Silicon Transistor
2SC3271F - Chroma Amplifier Transistor
2SC3415 - Triple Diffused Planar NPN Silicon Transistor
2SC3415S - Chroma Amplifier Transistor

Published: Oct 24, 2005 |