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2SC3359S - Power Transistor

Key Features

  • 1) High breakdown voltage, BVCEO=80V 2) Low saturation voltage, typically VCE(sat) = 0.2V at IB=0.3A / 0.03A zElectrical characteristics (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 80 5 0.3 0.3 150.
  • 55 to +150 Unit V V V A W C C zAbsolute maximum ratings (Ta=25°C) Parameter Collector-emitter breakdown volta.

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Datasheet Details

Part number 2SC3359S
Manufacturer ROHM
File Size 69.64 KB
Description Power Transistor
Datasheet download datasheet 2SC3359S Datasheet

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2SC3359S Transistors Power Transistor (80V, 0.3A) 2SC3359S zFeatures 1) High breakdown voltage, BVCEO=80V 2) Low saturation voltage, typically VCE(sat) = 0.2V at IB=0.3A / 0.03A zElectrical characteristics (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 80 5 0.3 0.