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2SC3356L - NPN TRANSISTOR

General Description

The 2SC3356L is available in SOT-23 package.

Key Features

  • High gain:︱S21E︱2 TYP. Value is 12dB @VCE=10V, IC=30mA, f=1GHz.
  • Low noise: NF TYP. Value is 1.5dB @VCE=10V, IC=7mA, f=1GHz.
  • fT (TYP. ) : TYP. Value is 8GHz @VCE=10V, IC=30mA.
  • Ultra high frequency low noise transistor.
  • Silicon epitaxial bipolar process.
  • High power gain, low noise figure,.
  • High dynamic range and ideal current characteristics.
  • Mainly used in VHF, UHF and CATV.
  • High frequency wideband low noise amplifier.
  • Available in SOT-23 packag.

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Datasheet Details

Part number 2SC3356L
Manufacturer AiT Semiconductor
File Size 312.78 KB
Description NPN TRANSISTOR
Datasheet download datasheet 2SC3356L Datasheet

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Full PDF Text Transcription (Reference)

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AiT Semiconductor Inc. www.ait-ic.com 2SC3356L GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR DESCRIPTION The 2SC3356L is available in SOT-23 package. ORDERING INFORMATION Package Type Part Number SOT-23 2SC3356L-X X=A,B Note See below hFE Classification Table SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products hFE CLASSIFICATION Classification Marking hFE A R24 80-140 B R25 120-200 FEATURES ⚫ High gain:︱S21E︱2 TYP. Value is 12dB @VCE=10V, IC=30mA, f=1GHz ⚫ Low noise: NF TYP. Value is 1.5dB @VCE=10V, IC=7mA, f=1GHz ⚫ fT (TYP.) : TYP. Value is 8GHz @VCE=10V, IC=30mA ⚫ Ultra high frequency low noise transistor ⚫ Silicon epitaxial bipolar process.