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2SC3355 - Silicon NPN RF Transistor

General Description

Low Noise NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The 2SC3355 is an NPN silicon epitaxial transistor designed for low n

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isc Silicon NPN RF Transistor DESCRIPTION ·Low Noise NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz •High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous Pc Collector Power Dissipation @TC=25℃ Tj Junction Temperature 100 mA 500 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC3355 · isc website：www.iscsemi.