2SC3355 datasheet by Inchange Semiconductor.
| Part number | 2SC3355 |
|---|---|
| Datasheet | 2SC3355_InchangeSemiconductor.pdf |
| File Size | 192.01 KB |
| Manufacturer | Inchange Semiconductor |
| Description | Silicon NPN RF Transistor |
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1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC3355 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IEBO Emitter Cutoff Current VEB = 1.0 V, IC = 0 0.1 uA ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.1 uA hFE DC Current Gain IC= 20mA;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SC3355 | NPN Silicon Transistor | NEC |
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2SC3355 | NPN SILICON EPITAXIAL TRANSISTOR | UTC |
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| Part Number | Description |
|---|---|
| 2SC3353 | Power Transistor |
| 2SC3356 | Silicon NPN Transistor |
| 2SC3357 | Silicon NPN RF Transistor |
| 2SC3303 | Silicon NPN Power Transistor |
| 2SC3371 | Power Transistor |
| 2SC3388 | Power Transistor |
| 2SC3085 | Silicon NPN Power Transistor |
| 2SC3094 | Silicon NPN Power Transistor |
| 2SC3121 | Silicon NPN RF Transistor |
| 2SC3122 | Silicon NPN RF Transistor |
