Datasheet Details
| Part number | 2SC3355 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.01 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet | 2SC3355_InchangeSemiconductor.pdf |
|
|
Overview: isc Silicon NPN RF Transistor.
| Part number | 2SC3355 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 192.01 KB |
| Description | Silicon NPN RF Transistor |
| Datasheet | 2SC3355_InchangeSemiconductor.pdf |
|
|
|
·Low Noise NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz •High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous Pc Collector Power Dissipation @TC=25℃ Tj Junction Temperature 100 mA 500 mW 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SC3355 · isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor 2SC3355 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC3355 | NPN Silicon Transistor | NEC |
 |
2SC3355 | NPN SILICON EPITAXIAL TRANSISTOR | UTC |
| Part Number | Description |
|---|---|
| 2SC3353 | Power Transistor |
| 2SC3356 | Silicon NPN Transistor |
| 2SC3357 | Silicon NPN RF Transistor |
| 2SC3303 | Silicon NPN Power Transistor |
| 2SC3371 | Power Transistor |
| 2SC3388 | Power Transistor |
| 2SC3085 | Silicon NPN Power Transistor |
| 2SC3094 | Silicon NPN Power Transistor |
| 2SC3121 | Silicon NPN RF Transistor |
| 2SC3122 | Silicon NPN RF Transistor |