2SC3355
Overview
Low Noise NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz Minimum Lot-to-Lot variations for robust device performance and reliable operation.
- Part: 2SC3355
- Description: Silicon NPN RF Transistor
- Category: Transistor
- Manufacturer: Inchange Semiconductor
- Size: 192.01 KB
Datasheets by Manufacturer
- 2SC3355 — Unisonic Technologies — NPN SILICON EPITAXIAL TRANSISTOR
- C3355 — NEC — 2SC3355
- 2SC3355 — NEC — NPN Silicon Transistor
- 2SC3356 — EVVO — NPN Transistors
- 2SC3356 — NEC — NPN Silicon Transistor
- C3358 — Unisonic Technologies — 2SC3358
- 2SC3357 — Kexin Semiconductor — NPN Silicon RF Transistor
- 2SC3356 — Unisonic Technologies — NPN SILICON TRANSISTOR
- C3356 — NEC — 2SC3356
- 2SC3352A — Panasonic — NPN Transistor