Datasheet Summary
isc Silicon NPN RF Transistor
DESCRIPTION
- Low Noise
NF = 1.5dB TYP @ VCE=10V，IC=7mA， f=1GHz
- High Power Gain ︱S21e︱2 = 9.5dB TYP @ VCE=10V，IC=20mA，f=1GHz
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV...
