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1N4594R - Silicon Standard Recovery Diode

Download the 1N4594R datasheet PDF (1N4594 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon standard recovery diode.

Features

  • High Surge Capability.
  • Types from 1000 V to 1400 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N4594(R) thru 1N4596(R) VRRM = 1000 V - 1400 V IF =150 A DO-8 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N4594(R) 1N4595(R) 1N4596(R) Repetitive peak reverse voltage DC blocking voltage Continuous for.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N4594-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N4594R
Manufacturer GeneSiC
File Size 698.66 KB
Description Silicon Standard Recovery Diode
Datasheet download datasheet 1N4594R Datasheet
Other Datasheets by GeneSiC

Full PDF Text Transcription

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 1000 V to 1400 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N4594(R) thru 1N4596(R) VRRM = 1000 V - 1400 V IF =150 A DO-8 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N4594(R) 1N4595(R) 1N4596(R) Repetitive peak reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave I2t for fusing Operating temperature Storage temperature VRRM VDC IF IF,SM I2t Tj Tstg TC ≤ 110 °C TC = 25 °C, tp = 8.
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