.
GeneSiC
1N1199A - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud .
GeneSiC
GBU8K - Single Phase Glass Passivated Silicon Bridge Rectifier
GBU8J thru GBU8M Single Phase Glass Passivated Silicon Bridge Rectifier Features • Plastic package has Underwriters Laboratory Flammability Classifi.
GeneSiC
KBU1004 - Single Phase Silicon Bridge Rectifier
Single Phase Silicon Bridge Rectifier KBU10005 thru KBU1004 VRRM = 50 V - 400 V IO = 10 A Features • Plastic material used carries Underwriters Labo.
GeneSiC
1N4595 - Silicon Standard Recovery Diode
Silicon Standard Recovery Diode Features • High Surge Capability • Types from 1000 V to 1400 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: St.
GeneSiC
DB105G - Single Phase Glass Passivated Silicon Bridge Rectifier
Single Phase Glass Passivated Silicon Bridge Rectifier DB105G thru DB107G VRRM = 600 V - 1000 V IO = 1 A Features • Ideal for printed circuit board .
GeneSiC
GD50MPS12H - Silicon Carbide Schottky Diode
GD50MPS12H 1200V 50A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Meri.
GeneSiC
GC50MPS33H - Silicon Carbide Schottky Diode
GC50MPS33H TM 3300V 40A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode VRRM = IF (TC = 152°C) = QC = 3300 V 40 A 429 nC Features Pa.
GeneSiC
G3R60MT07D - SiC MOSFET
G3R60MT07D 750 V 60 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ Technology with +15 V Gate Drive • Softer RDS(ON) .
GeneSiC
GC10MPS12-220 - Silicon Carbide Schottky Diode
GC10MPS12-220 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.
GeneSiC
GB01SLT12-252 - Silicon Carbide Schottky Diode
GB01SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.
GeneSiC
GB2X50MPS12-227 - Silicon Carbide Schottky Diode
GB2X50MPS12-227 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability •.
GeneSiC
GB2X100MPS12-227 - Silicon Carbide Schottky Diode
GB2X100MPS12-227 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability .
GeneSiC
GA01PNS150-201 - Silicon Carbide PiN Diode
GA01PNS150-201 Silicon Carbide PiN Diode Features 15 kV blocking 175 °C operating temperature Fast turn off characteristics Soft reverse reco.
GeneSiC
FR40MR05 - Silicon Fast Recovery Diode
Silicon Fast Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is.
GeneSiC
FR40KR05 - Silicon Fast Recovery Diode
Silicon Fast Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is.
GeneSiC
FR40K05 - Silicon Fast Recovery Diode
Silicon Fast Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is.
GeneSiC
GC10MPS12-252 - Silicon Carbide Schottky Diode
GC10MPS12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.
GeneSiC
GC05MPS12-220 - Silicon Carbide Schottky Diode
GC05MPS12-220 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.
GeneSiC
GC50MPS06-247 - Silicon Carbide Schottky Diode
GC50MPS06-247 650 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.
GeneSiC
GC02MPS12-220 - Silicon Carbide Schottky Diode
GC02MPS12-220 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.
