GeneSiC Datasheet | Specifications & PDF Download

  Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe O

Rating: 1 ★ (5 votes)

Silicon Carbide Thyristor Features • 6500 V Asymmetric SiC NPNP Thyristor • 150 °C operating temperature • Robust compact fully soldered package • SOT

Rating: 1 ★ (5 votes)

Die Datasheet GA50JT17-CAL Normally – OFF Silicon Carbide Junction Transistor Features  210 °C Maximum Operating Temperature  Gate Oxide Free SiC

Rating: 1 ★ (5 votes)

1N8033-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Zero rev

Rating: 1 ★ (5 votes)

Single Phase Silicon Bridge Rectifier W005M thru W04M VRRM = 50 V - 400 V IO = 1.5 A Features • Ideal for printed circuit board • Low forward voltag

Rating: 1 ★ (5 votes)

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud

Rating: 1 ★ (5 votes)

Single Phase Glass Passivated Silicon Bridge Rectifier DB101G thru DB104G VRRM = 50 V - 400 V IO = 1 A Features • Ideal for printed circuit board •

Rating: 1 ★ (5 votes)

GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Av

Rating: 1 ★ (5 votes)

IGBT/SiC Diode Co-pack Features •Optimal Punch Through (OPT) technology •SiC freewheeling diode • Positive temperature coefficient for easy parallel

Rating: 1 ★ (5 votes)

Silicon Standard Recovery Diode S300Y thru S300ZR VRRM = 1600 V - 2000 V IF =300 A Features • High Surge Capability • Types from 1600 V to 2000 V VR

Rating: 1 ★ (5 votes)

Silicon Standard Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cath

Rating: 1 ★ (5 votes)

Silicon Standard Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cath

Rating: 1 ★ (5 votes)

GB05MPS33-263 3300V 5A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Enhanced Surge and Avalanche Robustness • Superior Figure of

Rating: 1 ★ (5 votes)

Single Phase Glass Passivated Silicon Bridge Rectifier Features • Ideal for printed circuit board • Reliable low cost construction utilizing molded pl

Rating: 1 ★ (4 votes)

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu

Rating: 1 ★ (4 votes)

Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Isolated to Plate • Not ESD Sensitive FST10020 thru FST

Rating: 1 ★ (4 votes)

Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Ope

Rating: 1 ★ (4 votes)

Rating: 1 ★ (4 votes)

Rating: 1 ★ (4 votes)

Rating: 1 ★ (4 votes)