GeneSiC Datasheet | Specifications & PDF Download

Single Phase Silicon Bridge Rectifier Features • High efficiency • Silicon junction • Metal case • Types from 50 V to 400 V VRRM • Not ESD Sensitive M

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Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive MUR10005CT thru MUR10020CTR VR

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is ca

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Single Phase Glass Passivated Silicon Bridge Rectifier DB105G thru DB107G VRRM = 600 V - 1000 V IO = 1 A Features • Ideal for printed circuit board

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GD30MPS12H 1200V 30A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Superior Figure of Meri

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Single Phase Silicon Bridge Rectifier Features • High efficiency • Silicon junction • Metal case • Types from 50 V to 400 V VRRM • Not ESD Sensitive M

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Single Phase Silicon Bridge Rectifier Features • High efficiency • Silicon junction • Metal case • Types from 50 V to 400 V VRRM • Not ESD Sensitive M

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G3R160MT12J 1200 V 160 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature C

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GD60MPS17H 1700V 60A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen4 Thin Chip Technology for Low VF • Enhanced Surge and Aval

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GE06MPS06E 650V 6A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Gen5 Thin Chip Technology for Low VF • Low Conduction Losses for

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu

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Die Datasheet GA50JT12-CAL Normally – OFF Silicon Carbide Junction Transistor Features  210 °C Maximum Operating Temperature  Gate Oxide Free SiC

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Silicon Bridge Rectifier Features • Types up to 1000 V VRRM • Ideal for printed circuit board • Built-in printed circuit board stand-offs • High tempe

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Device under development A-GA10JT12 Normally – OFF Silicon Carbide Super Junction Transistor VDS I D RDS(ON) = 1200 V = 7A = 220 mȍ Features • 22

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Normally – OFF Silicon Carbide Junction Transistor Features • 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Exceptional Safe Ope

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Silicon Power Schottky Diode Features • High Surge Capability • Types up to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode.

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is ca

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Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive MUR10005CT thru MUR10020CTR VR

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G3R75MT12D 1200 V 75 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode Features • G3R™ (3rd Generation) Technology • Low Temperature Coe

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Silicon Standard Recovery Diode Features • High Surge Capability • Types from 800 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stu

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