Datasheet Summary
Silicon Power Schottky Diode
Features
- High Surge Capability
- Types from 150 V to 200 V VRRM
- Not ESD Sensitive
MBRF200150 thru MBRF200200R
VRRM = 150 V
- 200 V IF(AV) = 200 A
TO-244AB Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MBRF200150(R)
MBRF200200(R)
Repetitive peak reverse voltage RMS reverse voltage
DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
106 150 -55 to 150 -55 to 150
141 200 -55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
MBRF200150(R)
Average forward...