GeneSiC MBRF200150
Silicon Power Schottky Diode
| Part No. | MBRF200150 |
|---|---|
| Datasheet | MBRF200150 Download |
| Manufacturer |  GeneSiC |
| Description | Silicon Power Schottky Diode |
| Buy | Stock & Price |
FEATURES
● High Surge Capability● Types from 150 V to 200 V VRRM
● Not ESD Sensitive MBRF200150 thru MBRF200200R VRRM = 150 V - 200 V IF(AV) = 200 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF200150(R) MBRF200200(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150 -55 to 150 200 141 200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRF200150(R) Average forward current (per pkg) Peak forward surge current (per leg) Maximum forward voltage (per leg) Reverse current at rated DC blocking voltage (per leg) Thermal characteristics Thermal resistance, junction-case (per leg) IF(AV) IFSM VF IR RΘJC TC = 125 °C tp = 8.3 ms, half sine IFM = 100 A, Tj = 25 °C Tj = 25 °C Tj = 100 °C Tj = 150 °C 200 1500 0.88 1 10 30 0...
