1N5829R - Silicon Power Schottky Diode

Product Overview

GeneSiC

Part number	1N5829R
Manufacturer	GeneSiC
File Size	840.54 KB
Description	Silicon Power Schottky Diode
Datasheet	1N5829R Datasheet
Note	This datasheet PDF includes multiple part numbers: 1N5829R, 1N5829. Please refer to the document for exact specifications by model.
Additional preview pages of the 1N5829R datasheet.

High Surge Capability.
Types up to 40V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5829 thru 1N5831R VRRM = 20 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5829 (R) 1N5830 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward cur.

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Published: Jun 5, 2017 |