1N5831 Datasheet Silicon Power Schottky Diode

Manufacturer: GeneSiC

Download the 1N5831 datasheet PDF. This datasheet also includes the 1N5829 variant, as both parts are published together in a single manufacturer document.

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1N5831 silicon power schottky diode by GeneSiC - Datasheet Preview — Note: The manufacturer provides a single datasheet file (1N5829-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	1N5831
Manufacturer	GeneSiC
File Size	840.54 KB
Description	Silicon Power Schottky Diode
Datasheet	1N5831 Datasheet

Overview

Silicon Power Schottky Diode.

Key Features

High Surge Capability.
Types up to 40V VRRM.
Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N5829 thru 1N5831R VRRM = 20 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N5829 (R) 1N5830 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward cur.

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More Datasheets from GeneSiC

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1N5832R	Silicon Power Schottky Diode
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1N5834R	Silicon Power Schottky Diode
1N5826	Silicon Power Schottky Diode