1N8034-GA - High Temperature Silicon Carbide Power Schottky Diode

GeneSiC

Key Features

650 V Schottky rectifier.
250 °C maximum operating temperature.
Electrically isolated base-plate.
Zero reverse recovery charge.
Superior surge current capability.
Positive temperature coefficient of VF.
Temperature independent switching behavior.
Lowest figure of merit QC/IF.
Available screened to Mil-PRF-19500 Package.
RoHS Compliant VRRM IF (Tc=25°C) QC = 650 V = 30 A = 66 nC PIN 1 PIN 2 PIN 3 NC 123 TO.
257 (Isolated Base-plate.

1N8034-GA high temperature silicon carbide power schottky diode by GeneSiC - Datasheet Preview

Datasheet Details

Part number	1N8034-GA
Manufacturer	GeneSiC
File Size	784.81 KB
Description	High Temperature Silicon Carbide Power Schottky Diode
Datasheet	1N8034-GA Datasheet

Other Datasheets by GeneSiC

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1N8033-GA	High Temperature Silicon Carbide Power Schottky Diode
1N8024-GA	High Temperature Silicon Carbide Power Schottky Diode

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1N8034-GA High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  250 °C maximum operating temperature  Electrically isolated base-plate  Zero reverse recovery charge  Superior surge current capability  Positive temperature coefficient of VF  Temperature independent switching behavior  Lowest figure of merit QC/IF  Available screened to Mil-PRF-19500 Package  RoHS Compliant VRRM IF (Tc=25°C) QC = 650 V = 30 A = 66 nC PIN 1 PIN 2 PIN 3 NC 123 TO – 257 (Isolated Base-plate Hermetic Package) Advantages  High temperature operation  Improved circuit efficiency (Lower overall cost)  Low switching losses  Ease of paralleling devices without thermal runaway  Smaller heat sink requirements  Industry’s lowest reverse recovery charge  Industr