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FR16J02 - Silicon Fast Recovery Diode

Download the FR16J02 datasheet PDF (FR16B02 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon fast recovery diode.

Features

  • High Surge Capability.
  • Types from 100 V to 600 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR16B02 thru FR16JR02 VRRM = 100 V - 600 V IF = 16 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR16B(R)02 FR16D(R)02 FR16G(R)02 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltag.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FR16B02-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FR16J02
Manufacturer GeneSiC
File Size 800.87 KB
Description Silicon Fast Recovery Diode
Datasheet download datasheet FR16J02 Datasheet
Other Datasheets by GeneSiC

Full PDF Text Transcription

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Silicon Fast Recovery Diode Features • High Surge Capability • Types from 100 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR16B02 thru FR16JR02 VRRM = 100 V - 600 V IF = 16 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR16B(R)02 FR16D(R)02 FR16G(R)02 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VRRM VRMS VDC 100 200 400 70 140 280 100 200 400 Continuous forward current IF TC ≤ 100 °C 16 16 16 FR16J(R)02 Unit 600 V 420 V 600 V 16 A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.
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