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FR6J05 - Silicon Fast Recovery Diode

Key Features

  • High Surge Capability.
  • Types from 600 V to 1000 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR6J05 thru FR6MR05 VRRM = 600 V - 1000 V IF = 6 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR6J(R)05 FR6K(R)05 FR6M(R)05 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage.

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Datasheet Details

Part number FR6J05
Manufacturer GeneSiC
File Size 762.30 KB
Description Silicon Fast Recovery Diode
Datasheet download datasheet FR6J05 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Fast Recovery Diode Features • High Surge Capability • Types from 600 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR6J05 thru FR6MR05 VRRM = 600 V - 1000 V IF = 6 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR6J(R)05 FR6K(R)05 FR6M(R)05 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 100 °C 600 420 600 6 800 1000 560 700 800 1000 66 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.