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FR6MR05 - Silicon Fast Recovery Diode

Download the FR6MR05 datasheet PDF. This datasheet also covers the FR6J05 variant, as both devices belong to the same silicon fast recovery diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 600 V to 1000 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR6J05 thru FR6MR05 VRRM = 600 V - 1000 V IF = 6 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR6J(R)05 FR6K(R)05 FR6M(R)05 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FR6J05-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FR6MR05
Manufacturer GeneSiC
File Size 762.30 KB
Description Silicon Fast Recovery Diode
Datasheet download datasheet FR6MR05 Datasheet

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Other Datasheets by GeneSiC

Part Number Description
FR6M05 Silicon Fast Recovery Diode
FR6A02 Silicon Fast Recovery Diode
FR6A05 Silicon Fast Recovery Diode
FR6AR02 Silicon Fast Recovery Diode
FR6AR05 Silicon Fast Recovery Diode

Full PDF Text Transcription

Click to expand full text
Silicon Fast Recovery Diode Features • High Surge Capability • Types from 600 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR6J05 thru FR6MR05 VRRM = 600 V - 1000 V IF = 6 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR6J(R)05 FR6K(R)05 FR6M(R)05 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 100 °C 600 420 600 6 800 1000 560 700 800 1000 66 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.
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