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FR85JR02 - Silicon Fast Recovery Diode

Download the FR85JR02 datasheet PDF. This datasheet also covers the FR85B02 variant, as both devices belong to the same silicon fast recovery diode family and are provided as variant models within a single manufacturer datasheet.

Features

  • High Surge Capability.
  • Types from 100 V to 600 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR85B02 thru FR85JR02 VRRM = 100 V - 600 V IF = 85 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR85B(R)02 FR85D(R)02 FR85G(R)02 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltag.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FR85B02-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FR85JR02
Manufacturer GeneSiC
File Size 717.00 KB
Description Silicon Fast Recovery Diode
Datasheet download datasheet FR85JR02 Datasheet

Full PDF Text Transcription

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Silicon Fast Recovery Diode Features • High Surge Capability • Types from 100 V to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. FR85B02 thru FR85JR02 VRRM = 100 V - 600 V IF = 85 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions FR85B(R)02 FR85D(R)02 FR85G(R)02 Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage VRRM VRMS VDC 100 200 400 70 140 280 100 200 400 Continuous forward current IF TC ≤ 100 °C 85 85 85 FR85J(R)02 Unit 600 V 420 V 600 V 85 A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.
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