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GA05JT12-263 - Junction Transistor

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GeneSiC

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GA05JT12-263 Junction Transistor by GeneSiC - Datasheet Preview — Datasheet preview – GA05JT12-263

Datasheet Details

Part number	GA05JT12-263
Manufacturer	GeneSiC
File Size	731.17 KB
Description	Junction Transistor
Datasheet	GA05JT12-263 Datasheet
Additional preview pages of the GA05JT12-263 datasheet.

Product details

Features

Package VDS RDS(ON) ID = 1200 V = 260 mΩ = 5A.
175 °C maximum operating temperature.
Temperature independent switching performance.
Gate oxide free SiC switch.
Suitable for connecting an anti-parallel diode.
Positive temperature coefficient for easy paralleling.
Low gate charge.
Low intrinsic output capacitance.
RoHS Compliant D DS G D G S TO-263 Advantages .

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Published: Apr 14, 2017 |