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GA05JT03-46 - Junction Transistor

Features

  • 225°C maximum operating temperature.
  • Gate Oxide Free SiC Switch.
  • Exceptional Safe Operating Area.
  • Excellent Gain Linearity.
  • Temperature Independent Switching Performance.
  • Low Output Capacitance.
  • Positive Temperature Coefficient of RDS,ON.
  • Suitable for Connecting an Anti-parallel Diode Package.
  • RoHS Compliant D SG TO-46 VDS = RDS(ON) = ID (Tc = 25°C) = hFE (Tc = 25°C) = 300 V 240 mΩ 9A 110 D G S Advantages.
  • Compatible with Si MOSFET/IGBT.

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Datasheet preview – GA05JT03-46

Datasheet Details

Part number GA05JT03-46
Manufacturer GeneSiC
File Size 1.68 MB
Description Junction Transistor
Datasheet download datasheet GA05JT03-46 Datasheet
Additional preview pages of the GA05JT03-46 datasheet.

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Full PDF Text Transcription

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GA05JT03-46 Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Package  RoHS Compliant D SG TO-46 VDS = RDS(ON) = ID (Tc = 25°C) = hFE (Tc = 25°C) = 300 V 240 mΩ 9A 110 D G S Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Applications  Down Hole Oil Drilling  Geothermal Instrumentation  Solenoid Actu
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