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GA05JT12-263 - Junction Transistor

Features

  • Package VDS RDS(ON) ID = 1200 V = 260 mΩ = 5A.
  • 175 °C maximum operating temperature.
  • Temperature independent switching performance.
  • Gate oxide free SiC switch.
  • Suitable for connecting an anti-parallel diode.
  • Positive temperature coefficient for easy paralleling.
  • Low gate charge.
  • Low intrinsic output capacitance.
  • RoHS Compliant D DS G D G S TO-263 Advantages  .

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Datasheet preview – GA05JT12-263

Datasheet Details

Part number GA05JT12-263
Manufacturer GeneSiC
File Size 731.17 KB
Description Junction Transistor
Datasheet download datasheet GA05JT12-263 Datasheet
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Full PDF Text Transcription

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GA05JT12-263   Normally – OFF Silicon Carbide Junction Transistor Features Package VDS RDS(ON) ID = 1200 V = 260 mΩ = 5A  175 °C maximum operating temperature  Temperature independent switching performance  Gate oxide free SiC switch  Suitable for connecting an anti-parallel diode  Positive temperature coefficient for easy paralleling  Low gate charge  Low intrinsic output capacitance  RoHS Compliant D DS G D G S TO-263 Advantages   Applications  SiC transistor most compatible with existing Si gate-drivers  Low switching losses  Higher efficiency  High temperature operation  High short circuit withstand capability Absolute Maximum Ratings  Down Hole Oil Drilling, Geothermal Instrumentation  Hybrid Electric Vehicles (HEV)  Solar Inverters  Switched-Mode Power Su
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