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GA05JT12-263 Datasheet Junction Transistor

Manufacturer: GeneSiC

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Datasheet Details

Part number GA05JT12-263
Manufacturer GeneSiC
File Size 731.17 KB
Description Junction Transistor
Datasheet download datasheet GA05JT12-263 Datasheet

Overview

GA05JT12-263   Normally – OFF Silicon Carbide Junction Transistor.

Key Features

  • Package VDS RDS(ON) ID = 1200 V = 260 mΩ = 5A.
  • 175 °C maximum operating temperature.
  • Temperature independent switching performance.
  • Gate oxide free SiC switch.
  • Suitable for connecting an anti-parallel diode.
  • Positive temperature coefficient for easy paralleling.
  • Low gate charge.
  • Low intrinsic output capacitance.
  • RoHS Compliant D DS G D G S TO-263 Advantages  .

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