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GA15IDDJT22-FR4 - Non-Isolated Gate Driver

General Description

VCC Low RTN VCC Low Signal RTN Signal VCC High RTN VCC High Source Source Source Gate Gate Gate Header JP1 JP1 JP1 JP1 JP1 JP1 Gate Gate Gate Source Source Source Figure 2: Gate Drive Board Top View Table 2: GA15IDDJT22-FR4 Pin Out Connections Pin Label Suggested Connection VCC High + 12 V,

Key Features

  • Requires single 12 V voltage supply.
  • Pin Out compatible with MOSFET driver boards.
  • Multiple internal voltage level topology for low drive losses.
  • Point-of-load (POL), non-isolated design.
  • 5000 V Signal Isolation (up to 10 s).
  • Capable of high gate currents with 27 W maximum power.
  • RoHS Compliant Product Image GA15IDDJT22-FR4 VISO,SIG PDRIVE fmax = 5000 V = 27 W = 350 kHz Section I: Introduction The GA15IDDJT22-FR4 provides an optimized gate drive solution.

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Datasheet Details

Part number GA15IDDJT22-FR4
Manufacturer GeneSiC
File Size 913.28 KB
Description Non-Isolated Gate Driver
Datasheet download datasheet GA15IDDJT22-FR4 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Non-Isolated Gate Driver Gate Driver for SiC SJT with Signal Isolation Features  Requires single 12 V voltage supply  Pin Out compatible with MOSFET driver boards  Multiple internal voltage level topology for low drive losses  Point-of-load (POL), non-isolated design  5000 V Signal Isolation (up to 10 s)  Capable of high gate currents with 27 W maximum power  RoHS Compliant Product Image GA15IDDJT22-FR4 VISO,SIG PDRIVE fmax = 5000 V = 27 W = 350 kHz Section I: Introduction The GA15IDDJT22-FR4 provides an optimized gate drive solution for 10 and 20 mΩ SiC Junction Transistors (SJT).