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GA20SICP12-263 Datasheet - GeneSiC

Silicon Carbide Junction Transistor/Schottky Diode

GA20SICP12-263 Features

* 175 °C maximum operating temperature

* Temperature independent switching performance

* Gate oxide free SiC switch

* Integrated SiC Schottky Rectifier

* Positive temperature coefficient for easy paralleling

* Low intrinsic device capacitance

* Low gate charge Advantages

GA20SICP12-263 Datasheet (291.63 KB)

Preview of GA20SICP12-263 PDF

Datasheet Details

Part number:

GA20SICP12-263

Manufacturer:

GeneSiC

File Size:

291.63 KB

Description:

Silicon carbide junction transistor/schottky diode.

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TAGS

GA20SICP12-263 Silicon Carbide Junction Transistor Schottky Diode GeneSiC

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