Part number:
GA20SICP12-263
Manufacturer:
GeneSiC
File Size:
291.63 KB
Description:
Silicon carbide junction transistor/schottky diode.
* 175 °C maximum operating temperature
* Temperature independent switching performance
* Gate oxide free SiC switch
* Integrated SiC Schottky Rectifier
* Positive temperature coefficient for easy paralleling
* Low intrinsic device capacitance
* Low gate charge Advantages
GA20SICP12-263 Datasheet (291.63 KB)
GA20SICP12-263
GeneSiC
291.63 KB
Silicon carbide junction transistor/schottky diode.
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