Datasheet4U.com

GA20JT12-263 - Junction Transistor

Product Overview

GeneSiC

📥 Download Datasheet

GA20JT12-263 Junction Transistor by GeneSiC - Datasheet Preview — Datasheet preview – GA20JT12-263

Datasheet Details

Part number	GA20JT12-263
Manufacturer	GeneSiC
File Size	917.56 KB
Description	Junction Transistor
Datasheet	GA20JT12-263 Datasheet
Additional preview pages of the GA20JT12-263 datasheet.

Product details

Features

175 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Exceptional Safe Operating Area.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode Advantages.
Compatible with Si MOSFET/IGBT Gate Drive ICs.
> 20 µs Short-Circuit Withstand Capability.
Lowest-in-class Conduction Losses.
High Circuit E.

📁 Similar Datasheet

GA200 - SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GA200A - SILICON CONTROLLED RECTIFIERS (Digitron Semiconductors)
GA200HS60S - Standard Speed IGBT (International Rectifier)
GA200HS60S1 - Standard Speed IGBT (International Rectifier)
GA200HS60S1PBF - IGBT (Vishay Siliconix)
GA200NS61U - Ultra-Fast Speed IGBT (International Rectifier)
GA200SA60S - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)
GA200SA60SP - INSULATED GATE BIPOLAR TRANSISTOR (International Rectifier)

Other Datasheets by GeneSiC

GA20JT12-247 - Normally - OFF Silicon Carbide Junction Transistor
GA20JT06-CAL - OFF Silicon Carbide Junction Transistor
GA20SICP12-263 - Silicon Carbide Junction Transistor/Schottky Diode

Published: Apr 14, 2017 |