GA20JT12-263 Datasheet PDF - GeneSiC Junction Transistor Specs

GA20JT12-263 - Junction Transistor

Datasheet Summary

Features

175 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Exceptional Safe Operating Area.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode Advantages.
Compatible with Si MOSFET/IGBT Gate Drive ICs.
> 20 µs Short-Circuit Withstand Capability.
Lowest-in-class Conduction Losses.
High Circuit E.

Datasheet Details

Part number	GA20JT12-263
Manufacturer	GeneSiC
File Size	917.56 KB
Description	Junction Transistor
Datasheet	GA20JT12-263 Datasheet
Additional preview pages of the GA20JT12-263 datasheet.

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Full PDF Text Transcription

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Normally – OFF Silicon Carbide Junction Transistor Features  175 °C Maximum Operating Temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Package  RoHS Compliant D GA20JT12-263 VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1200 V 60 mΩ 45 A 80 D GDS G S TO-263 Applications  Down Hole Oil Drilling, Geothermal Instrumentation  Hybrid

Published: Apr 14, 2017 |