GA20SICP12-263 Description
Silicon Carbide Junction Transistor/Schottky Diode Co-pack.
GA20SICP12-263 Key Features
- 175 °C maximum operating temperature
- Temperature independent switching performance
- Gate oxide free SiC switch
- Integrated SiC Schottky Rectifier
- Positive temperature coefficient for easy paralleling
- Low intrinsic device capacitance
- Low gate charge
- Low switching losses
- High circuit efficiency
- High temperature operation