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GA20SICP12-263 - Silicon Carbide Junction Transistor/Schottky Diode

Product Overview

GeneSiC

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GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode by GeneSiC - Datasheet Preview — Datasheet preview – GA20SICP12-263

Datasheet Details

Part number	GA20SICP12-263
Manufacturer	GeneSiC
File Size	291.63 KB
Description	Silicon Carbide Junction Transistor/Schottky Diode
Datasheet	GA20SICP12-263 Datasheet
Additional preview pages of the GA20SICP12-263 datasheet.

Product details

Features

175 °C maximum operating temperature.
Temperature independent switching performance.
Gate oxide free SiC switch.
Integrated SiC Schottky Rectifier.
Positive temperature coefficient for easy paralleling.
Low intrinsic device capacitance.
Low gate charge Advantages.
Low switching losses.
High circuit efficiency.
High temperature operation.
High short circuit withstand capability.
Reduced cooling requirements.
Reduced system size Pa.

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Other Datasheets by GeneSiC

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Published: Jun 14, 2018 |