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GA20SICP12-263 - Silicon Carbide Junction Transistor/Schottky Diode

Datasheet Summary

Features

  • 175 °C maximum operating temperature.
  • Temperature independent switching performance.
  • Gate oxide free SiC switch.
  • Integrated SiC Schottky Rectifier.
  • Positive temperature coefficient for easy paralleling.
  • Low intrinsic device capacitance.
  • Low gate charge Advantages.
  • Low switching losses.
  • High circuit efficiency.
  • High temperature operation.
  • High short circuit withstand capability.
  • Reduced cooling requirements.
  • Reduced system size Pa.

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Datasheet preview – GA20SICP12-263

Datasheet Details

Part number GA20SICP12-263
Manufacturer GeneSiC
File Size 291.63 KB
Description Silicon Carbide Junction Transistor/Schottky Diode
Datasheet download datasheet GA20SICP12-263 Datasheet
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Full PDF Text Transcription

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  Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features  175 °C maximum operating temperature  Temperature independent switching performance  Gate oxide free SiC switch  Integrated SiC Schottky Rectifier  Positive temperature coefficient for easy paralleling  Low intrinsic device capacitance  Low gate charge Advantages  Low switching losses  High circuit efficiency  High temperature operation  High short circuit withstand capability  Reduced cooling requirements  Reduced system size Package  RoHS Compliant D GA20SICP12-263 VDS VDS(ON) ID RDS(ON) = = = = 1200 V 1.
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