GA20SICP12-263
GA20SICP12-263 is Silicon Carbide Junction Transistor/Schottky Diode manufactured by GeneSiC.
Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Features
- 175 °C maximum operating temperature
- Temperature independent switching performance
- Gate oxide free SiC switch
- Integrated SiC Schottky Rectifier
- Positive temperature coefficient for easy paralleling
- Low intrinsic device capacitance
- Low gate charge
Advantages
- Low switching losses
- High circuit efficiency
- High temperature operation
- High short circuit withstand capability
- Reduced cooling requirements
- Reduced system size
Package
- RoHS pliant
VDS VDS(ON) ID RDS(ON)
= = = =
1200 V 1.4 V 20 A 70 mΩ
TO-263
Applications
- Down Hole Oil Drilling, Geothermal Instrumentation
-...
