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GA50SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack

Features

  • 175 °C maximum operating temperature.
  • Temperature independent switching performance.
  • Gate oxide free SiC switch.
  • Integrated SiC Schottky Rectifier.
  • Positive temperature coefficient for easy paralleling.
  • Low intrinsic device capacitance.
  • Low gate charge Package.
  • RoHS Compliant S D S G GA50SICP12-227 VDS VDS(ON) ID RDS(ON) = = = = 1200 V 1.4 V 50 A 28 mΩ Advantages.
  • Low switching losses.
  • High circuit efficiency.
  • High temperature operati.

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Datasheet preview – GA50SICP12-227

Datasheet Details

Part number GA50SICP12-227
Manufacturer GeneSiC
File Size 240.80 KB
Description Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Datasheet download datasheet GA50SICP12-227 Datasheet
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Full PDF Text Transcription

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  Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features  175 °C maximum operating temperature  Temperature independent switching performance  Gate oxide free SiC switch  Integrated SiC Schottky Rectifier  Positive temperature coefficient for easy paralleling  Low intrinsic device capacitance  Low gate charge Package  RoHS Compliant S D S G GA50SICP12-227 VDS VDS(ON) ID RDS(ON) = = = = 1200 V 1.
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