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GA50SICP12-227 Datasheet - GeneSiC

Silicon Carbide Junction Transistor/Schottky Diode Co-pack

GA50SICP12-227 Features

* 175 °C maximum operating temperature

* Temperature independent switching performance

* Gate oxide free SiC switch

* Integrated SiC Schottky Rectifier

* Positive temperature coefficient for easy paralleling

* Low intrinsic device capacitance

* Low gate charge Package

GA50SICP12-227 Datasheet (240.80 KB)

Preview of GA50SICP12-227 PDF

Datasheet Details

Part number:

GA50SICP12-227

Manufacturer:

GeneSiC

File Size:

240.80 KB

Description:

Silicon carbide junction transistor/schottky diode co-pack.

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GA50SICP12-227 Silicon Carbide Junction Transistor Schottky Diode Co-pack GeneSiC

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