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GA50SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack

GA50SICP12-227 Description

  Silicon Carbide Junction Transistor/Schottky Diode Co-pack .

GA50SICP12-227 Features

* 175 °C maximum operating temperature
* Temperature independent switching performance
* Gate oxide free SiC switch
* Integrated SiC Schottky Rectifier
* Positive temperature coefficient for easy paralleling
* Low intrinsic device capacitance
* Low gate charge Package

GA50SICP12-227 Applications

* Down Hole Oil Drilling, Geothermal Instrumentation
* Hybrid Electric Vehicles (HEV)
* Solar Inverters
* Switched-Mode Power Supply (SMPS)
* Power Factor Correction (PFC)
* Induction Heating
* Uninterruptible Power Supply (UPS)
* Motor Drives Maximum Ratings at Tj =

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Datasheet Details

Part number
GA50SICP12-227
Manufacturer
GeneSiC
File Size
240.80 KB
Datasheet
GA50SICP12-227-GeneSiC.pdf
Description
Silicon Carbide Junction Transistor/Schottky Diode Co-pack

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Silicon Carbide Junction Transistor Schottky Diode Co-pack GeneSiC
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