Datasheet4U Logo Datasheet4U.com

GA50SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack

Features

  • 175 °C maximum operating temperature.
  • Temperature independent switching performance.
  • Gate oxide free SiC switch.
  • Integrated SiC Schottky Rectifier.
  • Positive temperature coefficient for easy paralleling.
  • Low intrinsic device capacitance.
  • Low gate charge Package.
  • RoHS Compliant S D S G GA50SICP12-227 VDS VDS(ON) ID RDS(ON) = = = = 1200 V 1.4 V 50 A 28 mΩ Advantages.
  • Low switching losses.
  • High circuit efficiency.
  • High temperature operati.

📥 Download Datasheet

Datasheet Details

Part number GA50SICP12-227
Manufacturer GeneSiC
File Size 240.80 KB
Description Silicon Carbide Junction Transistor/Schottky Diode Co-pack
Datasheet download datasheet GA50SICP12-227 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GA500TD60U HALF-BRIDGE IGBT DUAL INT-A-PAK International Rectifier
GA50K6A1A THERMISTORS TE
GA50K6A1B THERMISTORS TE
GA50K6A1C THERMISTORS TE
GA50K6A1D THERMISTORS TE

Other Datasheets by GeneSiC

Part Number Description
GA50JT06-258 Junction Transistor
GA50JT06-CAL OFF Silicon Carbide Junction Transistor
GA50JT12-247 Normally - OFF Silicon Carbide Junction Transistor
GA50JT12-CAL Junction Transistor
GA50JT17-247 Junction Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features  175 °C maximum operating temperature  Temperature independent switching performance  Gate oxide free SiC switch  Integrated SiC Schottky Rectifier  Positive temperature coefficient for easy paralleling  Low intrinsic device capacitance  Low gate charge Package  RoHS Compliant S D S G GA50SICP12-227 VDS VDS(ON) ID RDS(ON) = = = = 1200 V 1.
Published: |